Abstract: GaN continues to be an important material for thin films and can be deposited by CVD or ALD using single source
precursors that preferentially avoid Ga–C bonds. In this report, the complex bis(5-diisopropylamino-1,2,3,4-
tetrazolato)tris(dimethylamido)digallium (1) was synthesized to potentially serve as a precursor to GaN. 1 is the first
example of a Ga-tetrazolate complex, and was prepared by protonolysis of tris(dimethylamido)gallium using an
equimolar amount of 5-diisopropylamino-1H-1,2,3,4-tetrazole. The complex was characterized spectroscopically and
structurally. It exhibits a Ga2N2 4-membered ring, with a very close Ga–Ga distance of 2.8917(5) Å. The coordination to
the tetrazolate ligand occurs at N2, which is unusual due to N1 being more basic. This unusual coordination is due to the
steric hindrance provided by the very bulky substituent, the diisopropylamino group.